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IXTP14N60X2 Datasheet(数据表) 1 Page - IXYS Corporation

部件型号  IXTP14N60X2
说明  X2-Class Power MOSFET
下载  7 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IXTP14N60X2 Datasheet(HTML) 1 Page - IXYS Corporation

  IXTP14N60X2 数据表 HTML 1Page - IXYS Corporation IXTP14N60X2 数据表 HTML 2Page - IXYS Corporation IXTP14N60X2 数据表 HTML 3Page - IXYS Corporation IXTP14N60X2 数据表 HTML 4Page - IXYS Corporation IXTP14N60X2 数据表 HTML 5Page - IXYS Corporation IXTP14N60X2 数据表 HTML 6Page - IXYS Corporation IXTP14N60X2 数据表 HTML 7Page - IXYS Corporation  
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© 2020 Littelfuse, Inc.
DS100990A(5/20)
X2-Class
Power MOSFET
N-Channel Enhancement Mode
IXTP14N60X2
V
DSS
= 600V
I
D25
= 14A
R
DS(on)
250m
Features
International Standard Package
Low R
DS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol
Test Conditions
Characteristic Values
(T
J = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0V, ID = 250µA
600
V
V
GS(th)
V
DS = VGS, ID = 250µA
2.5
4.5
V
I
GSS
V
GS = 30V, VDS = 0V
100 nA
I
DSS
V
DS = VDSS, VGS = 0V
10
A
T
J = 125C
150
A
R
DS(on)
V
GS = 10V, ID = 0.5 • ID25, Note 1
250 m
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
600
V
V
DGR
T
J
= 25
C to 150C, R
GS = 1M
600
V
V
GSS
Continuous
30
V
V
GSM
Transient
40
V
I
D25
T
C = 25C
14
A
I
DM
T
C = 25C, Pulse W idth Limited by TJM
18
A
I
A
T
C = 25C
7
A
E
AS
T
C = 25C
150
mJ
dv/dt
I
S
 I
DM, VDD  VDSS, TJ  150°C
15
V/ns
P
D
T
C = 25C
180
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062 in.) from Case for 10s
M
d
Mounting Torque
1.13 / 10
Nm/lb.in
Weight
3
g
D
G
S
G = Gate
D
= Drain
S = Source
Tab = Drain
TO-220
(IXTP)
D (Tab)
S
G
D




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