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AON7534 数据表(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 AON7534
功能描述  N-Channel MOSFET uses advanced SGT to minimize on-state resistance
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

AON7534 数据表(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  AON7534 Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. AON7534 Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. AON7534 Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. AON7534 Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. AON7534 Datasheet HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. AON7534 Datasheet HTML 6Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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AON7534
www.doingter.cn
1
Description:
This N-Channel MOSFET uses advanced SGT to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features:
1) VDS=30V,ID=30A ,RDS(ON) <5mΩ@VGS=10V
2) Improved dv/dt capability
3) Fast switching
4) 100% EAS Guaranteed
5) Green Device Available.
Absolute Maximum Ratings:(TC=25unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±
20
V
ID
Continuous Drain Current-Continuous (TC=25℃)1
30
A
IDM
Drain Current – Pulsed
120
A
EAS
Single Pulse Avalanche Energy
29
mJ
IAS
Aval anche Current
17
A
PD
Power Dissipation (TC=25℃)
37
W/℃
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
Thermal Characteristics:
Symbol
Parameter
Max
Units
RƟJC
Thermal Resistance,Junction to Case
3.4
/W
RƟJA
Thermal Resistance,Junction to Ambient
62
D D
D
D
G
S
S
S1


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