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IRF7335D1 数据表(PDF) 2 Page - International Rectifier |
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IRF7335D1 数据表(HTML) 2 Page - International Rectifier |
2 / 12 page IRF7335D1 2 www.irf.com Parameter Min Typ Max Min Typ Max Units Conditions Continuous Source Current I S 10 10 A MOSFET symbol (Body Diode) showing the Pulse Source Current I SM 81 81 intergral reverse (Body Diode) p-n junction diode Diode Forward Voltage V SD 1 1.25 0.43 0.50 V T J = 25°C, IS = 1.0A,VGS= 0V Reverse Recovery Time t rr 28 31 ns T J = 125°C, IF = 8.0A, VR= 15V Reverse Recovery Charge Q rr 24 26 nC di/dt = 100A/µs Reverse Recovery Time t rr 29 31 ns T J = 125°C, IF =8.0A, VR= 15V Reverse Recovery Charge Q rr 26 26 nC di/dt =100A/µs Parameter Min Typ Max Min Typ Max Units Conditions Drain-to-Source BV DSS 30 30 V V GS = 0V, ID = 250µA Breakdown Voltage Static Drain-Source R DS(on) 13.4 17.5 9.6 12.8 m Ω V GS = 4.5V, ID = 10A on Resistance Gate Threshold Voltage V GS(th) 1.0 1.1 V V DS = VGS,ID = 250µA Drain-Source Leakage I DSS 30 30 µA V DS = 24V, VGS = 0 0.3 10 mA V DS = 24V, VGS = 0, Tj = 125°C Gate-Source Leakage I GSS ±100 ±100 nA V GS = ±12V Current Forward Transconductance g FS 21 28 S V GS =5V, I D =8.0A, V DS =15V Total Gate Charge Q G 13 20 18 27 V GS=4.5V, I D=8.0A, VDS=15V Pre-Vth Q GS1 3.2 5.8 Gate-Source Charge Post-Vth Q GS2 1.4 1.5 nC Gate-Source Charge Gate to Drain Charge Q GD 4.1 4.9 Switch Chg(Q gs2 + Qgd) Q sw 5.5 6.4 Output Charge Q oss 7.7 11 nC V DS = 16V, VGS = 0 Gate Resistance R G 4.3 10 2.6 5.0 Ω Turn-on Delay Time t d (on) 6.8 8.8 V DD = 16V, ID = 8.0A Rise Time t r 5.9 3.3 ns V GS = 4.5V Turn-off Delay Time t d (off) 19 17 Clamped Inductive Load Fall Time t f 9.1 7.0 Input Capacitance C iss 1500 2300 Output Capacitance C oss 310 450 pF V DS = 15V, VGS = 0 Reverse Transfer Capacitance C rss 140 180 Electrical Characteristics Source-Drain Rating & Characteristics & Schottky Current Q1-Control FET Q2-Synch FET Breakdown Voltage ∆BV DSS/∆ T J 0.025 0.033 V Reference to 25°C, I D = 1.0mA Tem. Coefficient S D G |
类似零件编号 - IRF7335D1 |
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类似说明 - IRF7335D1 |
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