AM4462N datasheet(1/5 Pages) DOINGTER

部件名	AM4462N

功能描述	N-Channel MOSFET uses advanced trench technology

Download	5 Pages

Scroll/Zoom	100%

制造商	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

网页	http://www.doingter.cn/

标志

1 / 5 page

www.doingter.cn

—

1 —

Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=60V,ID=8A,RDS(ON)<20mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃

unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

60

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current – Continuous (TC=25℃ )

8

A

Drain Current – Continuous (TC=100℃ )

5.6

IDM

Drain Current – Pulsed

1

32

PD

Power Dissipation (TC=25℃ )

2.1

W

Power Dissipation – Derate above 25℃

---

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

---

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

60

G

D

S1

S

AM 4462N

类似零件编号 - AM4462N

制造商	部件名	数据表	功能描述
Analog Power	AM4462N	369Kb / 5P	N-Channel 60-V (D-S) MOSFET

More results

类似说明 - AM4462N

制造商	部件名	数据表	功能描述
SHENZHEN DOINGTER SEMIC...	DC006NG	827Kb / 4P	N-Channel MOSFET uses advanced trench technology
	DC022NG	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	FH070NR	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	CJP07N65	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	CEP93A3	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	CJPF12N65	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	CJU50N06	1,014Kb / 4P	N-Channel MOSFET uses advanced trench technology
	APM2055NU	965Kb / 5P	N-Channel MOSFET uses advanced trench technology
	APM4030BNU	635Kb / 5P	N-Channel MOSFET uses advanced trench technology
	DKI06261	887Kb / 4P	N-Channel MOSFET uses advanced trench technology
	STP454	1Mb / 5P	N-Channel MOSFET uses advanced trench technology