TC55W800XB8 datasheet(4/12 Pages) TOSHIBA

部件名	TC55W800XB8

功能描述	524,288-WORD BY 16-BIT FULL CMOS STATIC RAM

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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4 / 12 page

TC55W800XB7,8

2001-10-03

4/12

DC CHARACTERISTICS (Ta

==== −−−−40° to 85°C, VDD ==== 2.3 to 3.3 V)

SYMBOL

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

IIL

Input Leakage

Current

VIN = 0 V~VDD



±1.0

µA

IOH

Output High Current

VOH = VDD − 0.5 V

−0.5



mA

IOL

Output Low Current

VOL = 0.4 V

2.1



mA

ILO

Output Leakage

Current

1

CE

= VIH or CE2 = VIL or LB and UB = VIH

or R/W

= VIL or OE = VIH, VOUT = 0 V~VDD



±1.0

µA

min



50

lDDO1

1

CE

= VIL and CE2 = VIH and

LB and UB

= VIL and R/W = VIH and

IOUT = 0 mA and Other Input = VIH/VIL

tcycle

1

µs



10

mA

min



45

lDDO2

Operating Current

1

CE

= 0.2 V and CE2 = VDD − 0.2 V and

LB and UB

= 0.2 V,

R/W

= VDD − 0.2 V and IOUT = 0 mA,

Other Input

= VDD − 0.2 V/0.2 V

tcycle

1

µs



5

mA

IDDS1

1

CE

= VIH or CE2 = VIL or LB and UB = VIH



2

mA

Ta

= 25°C



1

VDD =

3.0 V

± 10%

Ta

= −40~85°C



10

Ta

= 25°C



0.05

0.5

Ta

= −40~40°C



1

IDDS2

(Note)

Standby Current

1

CE

= VDD − 0.2 V

or CE2

= 0.2 V

or LB and UB

=

VDD − 0.2 V,

VDD = 1.5 V~3.3 V

VDD = 3.0 V

Ta

= −40~85°C



5

µA

Note

･ In standby mode with

1

CE

≥ VDD − 0.2 V, these limits are assured for the condition CE2 ≥ VDD − 0.2 V or CE2 ≤ 0.2 V.

･ In standby mode with LB and UB

≥ VDD − 0.2 V, these limits are assured for the condition

1

CE

≥ VDD − 0.2 V or

1

CE

≤ 0.2 V and CE2 ≥ VDD − 0.2 V or CE2 ≤ 0.2 V.

CAPACITANCE (Ta

==== 25°C, f ==== 1 MHz)

SYMBOL

PARAMETER

TEST CONDITION

MAX

UNIT

CIN

Input Capacitance

VIN = GND

10

pF

COUT

Output Capacitance

VOUT = GND

10

pF

Note:

This parameter is periodically sampled and is not 100% tested.

类似零件编号 - TC55W800XB8

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	TC55W800FT	188Kb / 13P	524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
	TC55W800FT-55	188Kb / 13P	524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
	TC55W800FT-70	188Kb / 13P	524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM

More results

类似说明 - TC55W800XB8

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	TC55W800FT-55	188Kb / 13P	524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
	TC55V040AFT-55	105Kb / 11P	524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
	TC55VCM208ASTN40	111Kb / 12P	524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
	TC55V400AFT-70	173Kb / 11P	262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
	TC55VEM416AXBN55	208Kb / 14P	1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
	TC55VCM416BTGN55	238Kb / 18P	1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
	TC55V4000ST-70	169Kb / 10P	524,288-WORD BY 8-BIT STATIC RAM
	TC55NEM208AFPV	120Kb / 11P	524,288-WORD BY 8-BIT STATIC RAM
	TC55W1600FT	202Kb / 13P	1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
	TC55VBM416AFTN55	204Kb / 14P	1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM

More results

TC55W800XB8 数据表(PDF) 4 Page - Toshiba Semiconductor

TC55W800XB8 数据表(HTML) 4 Page - Toshiba Semiconductor

类似零件编号 - TC55W800XB8

类似说明 - TC55W800XB8

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链接网址

TC55W800XB8 数据表(PDF) 4 Page - Toshiba Semiconductor

TC55W800XB8 数据表(HTML) 4 Page - Toshiba Semiconductor

类似零件编号 - TC55W800XB8

类似说明 - TC55W800XB8

Html Pages

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数据表 下载

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