PK648BA datasheet(2/8 Pages) UNIKC

部件名	PK648BA

功能描述	N-Channel Enhancement Mode MOSFET

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制造商	UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]

网页	http://www.unikc.com.cn/

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PK648BA

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

30

1.35

1.75

2.35

±100

nA

1

10

3.3

5.2

2.6

3.4

60

S

2071

329

225

1.9

Ω

VGS =10V

40.9

VGS =4.5V

21.2

6.3

9.6

26

12

50

10

35

A

1

V

25

nS

12

nC

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is 26A.

VGS = 4.5V, ID = 15A

V

IF = 18A, dlF/dt = 100A / mS

UNITS

Coss

VDS = 0V, VGS = ±20V

gfs

RDS(ON)

SYMBOL

V(BR)DSS

TEST CONDITIONS

STATIC

nC

VGS = 0V, VDS = 0V, f = 1MHz

Qgs

mA

DYNAMIC

mΩ

VDS = 24V, VGS = 0V

Ciss

VDS = 5V, ID = 18A

pF

IDSS

Qrr

Reverse Recovery Charge

Continuous Current

3

Forward Voltage

1

Reverse Recovery Time

IS

VSD

Forward Transconductance

1

trr

IF = 18A, VGS = 0V

nS

VDS = 15V,

ID @ 18A, VGS = 10V, RGEN = 6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

td(on)

tr

td(off)

tf

Turn-On Delay Time

2

Rise Time

2

Turn-Off Delay Time

2

Fall Time

2

Gate Threshold Voltage

Drain-Source On-State

Resistance

1

Rg

Zero Gate Voltage Drain

Current

IGSS

VDS = VGS, ID = 250mA

VGS = 0V, ID = 250mA

Gate-Body Leakage

VGS(th)

Drain-Source Breakdown

Voltage

VDS = 15V, ID = 18A

Gate-Drain Charge

2

Gate-Source Charge

2

Reverse Transfer Capacitance

Gate Resistance

Qg

Total Gate Charge

2

Qgd

Crss

Input Capacitance

VGS = 0V, VDS = 15V, f = 1MHz

PARAMETER

Output Capacitance

VGS = 10V , ID = 18A

VDS = 20V, VGS = 0V, TJ = 55 °C

LIMITS

REV 1.0

2

2016/11/4

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