IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 30N60

IXGM 30N60

IXGH 30N60A IXGM 30N60A

TO-247 AD Outline

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

8

16

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

2800

pF

C

oes

V

230

pF

C

res

70

pF

Q

g

150

180

nC

Q

ge

I

35

50

nC

Q

gc

60

90

nC

t

d(on)

100

ns

t

ri

200

ns

t

d(off)

500

ns

t

fi

30N60A

200

ns

E

off

30N60A

2

mJ

t

d(on)

100

ns

t

ri

200

ns

E

on

3mJ

t

d(off)

600

1000

ns

t

fi

30N60

500

1500

ns

30N60A

250

800

ns

E

off

30N60

5.5

mJ

30N60A

4.0

mJ

R

thJC

0.62 K/W

R

thCK

0.25

K/W

IXGH 30N60 and IXGH 30N60A characteristic curves are located on the

IXGH 30N60U1 and IXGH 30N60AU1 data sheets.

Inductive load, T

°°°°C

I

V

Switching times may increase

for V

higher T

TO-204AE Outline

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

1 = Gate

2 = Emitter

Case = Collector

Inductive load, T

°°°°C

I

L = 300

µH

V

R

Remarks: Switching times

may increase for V

CE

(Clamp) > 0.8 • V

T