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P2N2222A Datasheet(数据表) 1 Page - ON Semiconductor

部件型号  P2N2222A
说明  Amplifier Transistors(NPN Silicon)
下载  6 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
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© Semiconductor Components Industries, LLC, 2007
April, 2007 -- Rev. 5
1
Publication Order Number:
P2N2222A/D
P2N2222A
Amplifier Transistors
NPN Silicon
Features
These are Pb--Free Devices*
MAXIMUM RATINGS (TA =25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Collector--Emitter Voltage
VCEO
40
Vdc
Collector--Base Voltage
VCBO
75
Vdc
Emitter--Base Voltage
VEBO
6.0
Vdc
Collector Current -- Continuous
IC
600
mAdc
Total Device Dissipation @ TA =25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC =25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ,Tstg
--55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RθJA
200
°C/W
Thermal Resistance, Junction to Case
RθJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
P2N2222ARL1G
TO--92
(Pb--Free)
5000 Units/Bulk
Device
Package
Shipping
P2N2222AG
TO--92
(Pb--Free)
2000/Tape & Ammo
ORDERING INFORMATION
COLLECTOR
1
2
BASE
3
EMITTER
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO--92
CASE 29
STYLE 17
MARKING DIAGRAM
P2N2
222A
AYWW G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb--Free Package
(Note: Microdot may be in either location)




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