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IXGH24N60B 数据表(PDF) 4 Page - IXYS Corporation

部件名 IXGH24N60B
功能描述  HiPerFAST IGBT
Download  4 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IXGH24N60B 数据表(HTML) 4 Page - IXYS Corporation

  IXGH24N60B Datasheet HTML 1Page - IXYS Corporation IXGH24N60B Datasheet HTML 2Page - IXYS Corporation IXGH24N60B Datasheet HTML 3Page - IXYS Corporation IXGH24N60B Datasheet HTML 4Page - IXYS Corporation  
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXGH 24N60B
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
D=0.2
V
CE - Volts
0
100
200
300
400
500
600
0.1
1
10
100
Q
g - nanocoulombs
0
20406080
100
0
3
6
9
12
15
R
G - Ohms
0
102030
40
50
0.0
0.5
1.0
1.5
2.0
2.5
T
J = 125°C
I
C - Amperes
0
10203040
50
0.0
0.5
1.0
1.5
2.0
2.5
V
CE = 300V
I
C = 24A
I
C = 24A
E
(ON)
E
(OFF)
E
(ON)
E
(OFF)
T
J = 125°C
R
G = 10Ω
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
R
G = 10Ω
T
J = 125°C
24N60B
24N60B
Fig. 11. Transient Thermal Resistance
Fig. 10. Turn-off Safe Operating Area
Fig. 9. Gate Charge
Fig. 7. Dependence of tfi and E
OFF on IC.
Fig. 8. Dependence of tfi and E
OFF on RG.
F ig. 10. Turn-o ff S a fe Operating A rea
0.1
1
10
100
0
100
200
300
400
500
600
V CE - V olts
TJ = 125ºC
RG = 10Ω
dV /dT < 5V /ns


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