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IXGH24N60A 数据表(PDF) 2 Page - IXYS Corporation

部件名 IXGH24N60A
功能描述  HiPerFAST IGBT
Download  2 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IXGH24N60A 数据表(HTML) 2 Page - IXYS Corporation

  IXGH24N60A Datasheet HTML 1Page - IXYS Corporation IXGH24N60A Datasheet HTML 2Page - IXYS Corporation  
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 24N60A
TO-247 AD Outline
Inductive load, T
J = 25°
°°°°C
I
C = IC90, VGE = 15 V, L = 100 µH,
V
CE = 0.8 VCES, RG = Roff = 10 Ω
Remarks: Switching times may increase
for V
CE (Clamp) > 0.8 • VCES , higher TJ or
increased R
G
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Inductive load, T
J = 125°
°°°°C
I
C = IC90, VGE = 15 V, L = 100 µH
V
CE = 0.8 VCES, RG = Roff = 10 Ω
Remarks: Switching times may increase
for V
CE (Clamp) > 0.8 • VCES, higher TJ or
increased R
G
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90; VCE = 10 V,
9
13
S
Pulse test, t
≤ 300 µs, duty cycle ≤ 2 %
C
ies
1500
pF
C
oes
V
CE = 25 V, VGE = 0 V, f = 1 MHz
135
pF
C
res
40
pF
Q
g
90
120
nC
Q
ge
I
C = IC90, VGE = 15 V, VCE = 0.5 VCES
11
15
nC
Q
gc
30
40
nC
t
d(on)
25
ns
t
ri
15
ns
E
on
0.6
mJ
t
d(off)
150
200
ns
t
fi
110
270
ns
E
off
1.5
mJ
t
d(on)
25
ns
t
ri
15
ns
E
on
0.8
mJ
t
d(off)
250
ns
t
fi
400
ns
E
off
2.3
mJ
R
thJC
0.83 K/W
R
thCK
0.25
K/W
IXGH 24N60A characteristic curves are located on the
IXGH 24N60AU1 data sheet.


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