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YFW4153 数据表(PDF) 2 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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YFW4153 数据表(HTML) 2 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
2 / 5 page YFW4153 SOT-523 2 / 5 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 1 mA, VGS = - 10 V 12 ⎯ ⎯ V Drain cutoff current IDSS VDS =20 V, VGS = 0 ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±10 V, VDS = 0 ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = 3 V, ID = 1 mA 0.35 ⎯ 1.0 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 200 mA (Note2) 420 840 ⎯ mS ID = 200 mA, VGS = 5.0 V (Note2) ⎯ 0.46 0.63 ID = 200 mA, VGS = 4.5 V (Note2) ⎯ 0.51 0.66 ID = 200 mA, VGS = 2.5 V (Note2) ⎯ 0.66 0.85 ID = 100 mA, VGS = 1.8 V (Note2) ⎯ 0.81 1.14 Drain-source ON-resistance RDS (ON) ID = 50 mA, VGS = 1.5 V (Note2) ⎯ 0.95 1.52 Ω Input capacitance Ciss ⎯ 46 ⎯ Output capacitance Coss ⎯ 10.8 ⎯ Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 7.3 ⎯ pF Total Gate Charge Qg ⎯ 1.23 ⎯ Gate −Source Charge Qgs ⎯ 0.60 ⎯ Gate −Drain Charge Qgd VDS = 10V, ID = 0.5 A VGS = 4.0 V ⎯ 0.63 ⎯ nC Turn-on time ton ⎯ 30 ⎯ Switching time Turn-off time toff VDD = 10 V, ID = 200 mA VGS = 0 to 2.5 V, RG = 50 Ω ⎯ 75 ⎯ ns Drain-source forward voltage VDSF ID = -0.5 A, VGS = 0 V (Note2) ⎯ -0.88 -1.2 V Note2: Pulse test Switching Time Test Circuit Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the SSM3K36FS). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2.5 V ton toff (c) VOUT 0 V VDD VDS (ON) tr tf 10% 90% 90% 10% (a) Test Circuit VDD = 10 V RG = 50 Ω D.U. ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 0 2.5 V IN OUT VDD 10 μs (b) VIN ■ |
类似零件编号 - YFW4153 |
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类似说明 - YFW4153 |
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