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KFG2816D1M-DID 数据表(PDF) 9 Page - Samsung semiconductor |
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KFG2816D1M-DID 数据表(HTML) 9 Page - Samsung semiconductor |
9 / 87 page OneNAND128 FLASH MEMORY 9 TERMS, ABBREVIATIONS AND DEFINITIONS B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b (lower-case letter) Bit ECC Error Correction Code Calculated ECC ECC which has been calculated during load or program access Written ECC ECC which has been stored as data in the NAND Flash Array or in the BufferRAM BufferRAM On-chip Internal Buffer consisting of BootRAM and DataRAM BootRAM A 1KB portion of the BufferRAM reserved for Bootcode buffering DataRAM A 2KB portion of the BufferRAM reserved for Data buffering Memory NAND Flash array which is embedded on OneNAND Sector Partial unit of page, of which size is 512B for main area and 16B for spare area data. It is the minimum Load/Program/Copy-Back program unit while one~two sector operation is available Data unit Possible data unit to be read from memory to BufferRAM or to be programmed to memory. - 528B of which 512B is in main area and 16B in spare area - 1056B of which 1024B is in main area and 32B in spare area |
类似零件编号 - KFG2816D1M-DID |
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类似说明 - KFG2816D1M-DID |
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