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KFG2816D1M-DID 数据表(PDF) 9 Page - Samsung semiconductor

部件名 KFG2816D1M-DID
功能描述  OneNAND SPECIFICATION
Download  87 Pages
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制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor

KFG2816D1M-DID 数据表(HTML) 9 Page - Samsung semiconductor

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OneNAND128
FLASH MEMORY
9
TERMS, ABBREVIATIONS AND DEFINITIONS
B (capital letter)
Byte, 8bits
W (capital letter)
Word, 16bits
b (lower-case letter)
Bit
ECC
Error Correction Code
Calculated ECC
ECC which has been calculated during load or program access
Written ECC
ECC which has been stored as data in the NAND Flash Array or in the BufferRAM
BufferRAM
On-chip Internal Buffer consisting of BootRAM and DataRAM
BootRAM
A 1KB portion of the BufferRAM reserved for Bootcode buffering
DataRAM
A 2KB portion of the BufferRAM reserved for Data buffering
Memory
NAND Flash array which is embedded on OneNAND
Sector
Partial unit of page, of which size is 512B for main area and 16B for spare area data.
It is the minimum Load/Program/Copy-Back program unit while one~two sector operation is
available
Data unit
Possible data unit to be read from memory to BufferRAM or to be programmed to memory.
- 528B of which 512B is in main area and 16B in spare area
- 1056B of which 1024B is in main area and 32B in spare area


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