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WSD4098DN56 数据表(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSD4098DN56 数据表(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
2 / 7 page WSD4098DN56 www.winsok.tw Page 2 Dec.2014 Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A 40 - - V IDSS Zero Gate Voltage Drain Current VDS=32V, VGS=0V - - 1 A TJ=85°C - - 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250A 1.2 1.8 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA DS(ON) e Drain-Source On-state Resistance VGS=10V, IDS=14A - 6.8 7.8 m VGS=4.5V, IDS=12 A - 9.0 11 Diode Characteristics Diode Forward Voltage ISD=1A, VGS=0V - 0.75 1.1 V trr Reverse Recovery Time ISD=20A, dlSD/dt=100A/µs - 23 - ns Qrr Reverse Recovery Charge - 13 - nC Dynamic Characteristics f RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.5 - Ciss Input Capacitance VGS=0V, VDS=20V, Frequency=1.0MHz - 1370 1781 pF Coss Output Capacitance - 317 - Crss Reverse Transfer Capacitance - 96 - td(ON) Turn-on Delay Time VDD =20V, RL=20, IDS=1A, VGEN=10V, RG=6 - 13.8 - ns tr Turn-on Rise Time - 8 - td(OFF) Turn-off Delay Time - 30 - tf Turn-off Fall Time - 21 - Gate Charge Characteristics f Qg Total Gate Charge VDS=20V, VGS=10V, IDS=6A - 23 28 nC Qg Total Gate Charge VDS=20V, VGS=4.5V, IDS=6A - 22 - Qgth Threshold Gate Charge - 2.6 - Qgs Gate-Source Charge - 4.7 - Qgd Gate-Drain Charge - 3 - Dual N-Ch MOSFET Note e:Pulse test ; pulse width≤300ms, duty cycle≤2%. Note f:Guaranteed by design, not subject to production testing. VSD e R |
类似零件编号 - WSD4098DN56 |
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类似说明 - WSD4098DN56 |
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