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WSD3020DN Datasheet(数据表) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部件型号  WSD3020DN
说明  Dual N-Ch MOSFET
下载  5 Pages
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制造商  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
网页  http://www.winsok.tw/index.html
标志 

WSD3020DN Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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 1 page
background image
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Sou
rce Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
1
21
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
1
13
A
ID@TA=25℃
Continuous Drain Current, VGS @ 10V
1
7.5
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V
1
6.0
A
IDM
Pulsed Drain Current
2
25
A
EAS
Single Pulse Avalanche Energy
3
15
mJ
IAS
Avalanche Current
17
A
PD@TC=25℃
Total Power Dissipation
4
14
W
PD@TA=25℃
Total Power Dissipation
4
2.5
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-Ambient
1
---
7
0
/W
RθJC
Thermal Resistance Junction-Case
1
---
8.5
/W
BVDSS
RDSON
ID
30V
1
7mΩ
21A
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
General Description
Features
Applications
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
Absolute Maximum Ratings
Thermal Data
DFN3X3
-8 Pin Configuration
Product Summery
WSD3020DN
Page 1
www.winsok.tw
Dec.2014
Dual N-Ch MOSFET
The WSD3020DN is the highest performance
trench Dual N-Ch MOSFET with extreme high
cell density,which provide excellent RDSON
and gate charge for most of the synchronous
buck converter applications .
The WSD3020DN meet the RoHS and
Green Product requirement 100% EAS
guaranteed with full function reliability
approved.




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