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MJE4343 数据表(PDF) 2 Page - ON Semiconductor |
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MJE4343 数据表(HTML) 2 Page - ON Semiconductor |
2 / 6 page MJE4343 MJE4353 2 Motorola Bipolar Power Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) VCEO(sus) 160 — Vdc Collector–Emitter Cutoff Current (VCE = 80 Vdc, IB = 0) ICEO — 750 µAdc Collector–Emitter Cutoff Current (VCE = Rated VCB, VEB(off) = 1.5 Vdc) (VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C) ICEX — — 1.0 5.0 mAdc Collector–Base Cutoff Current (VCB = Rated VCB, IE = 0) ICBO — 750 µAdc Emitter–Base Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO — 1.0 mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 8.0 Adc, VCE = 2.0 Vdc) (IC = 16 Adc, VCE = 4.0 Vdc) hFE 15 8.0 35 (Typ) 15 (Typ) — Collector–Emitter Saturation Voltage (IC = 8.0 Adc, IB = 800 mA) (IC = 16 Adc, IB = 2.0 Adc) VCE(sat) — — 2.0 3.5 Vdc Base–Emitter Saturation Voltage (IC = 16 Adc, IB = 2.0 Adc) VBE(sat) — 3.9 Vdc Base–Emitter On Voltage (IC = 16 Adc, VCE = 4.0 Vdc) VBE(on) — 3.9 Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (2) (IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz) fT 1.0 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob — 800 pF (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle w 2.0%. (2) fT = hfe• ftest. Figure 2. Switching Times Test Circuit +11 V 25 µs 0 – 9.0 V RB –4 V D1 SCOPE VCC + 30 V RC tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 51 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 3.0 IC, COLLECTOR CURRENT (AMP) TJ = 25°C IC/IB = 10 VCE = 30 V 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.2 0.5 0.7 5.0 2.0 1.0 3.0 20 Figure 3. Typical Turn–On Time 10 7.0 tr 0.3 Note: Reverse polarities to test PNP devices. td @ VBE(off) = 5.0 V |
类似零件编号 - MJE4343 |
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类似说明 - MJE4343 |
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