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TSC5302DCP 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

部件名 TSC5302DCP
功能描述  High Voltage NPN Transistor with Diode
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

TSC5302DCP 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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Preliminary
TS5302D Preliminary
1-1
2004/09 rev. A
TSC5302D
High Voltage NPN Transistor with Diode
BVCEO = 400V
BVCBO = 800V
Ic = 2A
VCE (SAT), = 1.0V @ Ic / Ib = 1A / 0.2A
Ordering Information
Part No.
Packing
Package
TSC5302DCH
Tube
TO-251
TSC5302DCP
T&R
TO-252
Features
Built-in free-wheeling diode makes efficient anti
saturation operation.
No need to interest an hfe value because of low variable
storage-time spread even though comer spirit product.
Low base drive requirement.
Suitable for half bridge light ballast applications.
Structure
Silicon triple diffused type.
NPN silicon transistor with Diode
Block Diagram
Absolute Maximum Rating (Ta = 25
oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
800V
V
Collector-Emitter Voltage
VCEO
400V
V
Emitter-Base Voltage
VEBO
10
V
DC
2
Collector Current
Pulse
IC
4
A
DC
1
Base Current
Pulse
IB
2
A
TO-251
75
Collector Power Dissipation (Tc=25
oC)
TO-252
PD
1.5
W
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TSTG
- 65 to +150
oC
Thermal Resistance Junction to Case
RΘjc
6.25
oC/W
Thermal Resistance Junction to Ambient
RΘja
100
oC/W
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
Pin assignment:
1.
Base
2.
Collector
3.
Emitter


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