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JS28F320J3C-120 数据表(PDF) 27 Page - Intel Corporation

部件名 JS28F320J3C-120
功能描述  Intel StrataFlash Memory (J3)
Download  72 Pages
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制造商  INTEL [Intel Corporation]
网页  http://www.intel.com
标志 INTEL - Intel Corporation

JS28F320J3C-120 数据表(HTML) 27 Page - Intel Corporation

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256-Mbit J3 (x8/x16)
Datasheet
27
7.3
Block Erase, Program, and Lock-Bit Configuration
Performance
Table 10. Configuration Performance
#
Sym
Parameter
Typ
Max
(8)
Unit
Notes
W16
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
218
654
µs
1,2,3,4,5,6,7
W16
tWHQV3
tEHQV3
Byte Program Time (Using Word/Byte Program Command)
210
630
µs
1,2,3,4
Block Program Time (Using Write to Buffer Command)
0.8
2.4
sec
1,2,3,4
W16
tWHQV4
tEHQV4
Block Erase Time
1.0
5.0
sec
1,2,3,4
W16
tWHQV5
tEHQV5
Set Lock-Bit Time
64
75/85
µs
1,2,3,4,9
W16
tWHQV6
tEHQV6
Clear Block Lock-Bits Time
0.5
0.70/1.4
sec
1,2,3,4,10
W16
tWHRH1
tEHRH1
Program Suspend Latency Time to Read
25
75/90
µs
1,2,3,9
W16
tWHRH
tEHRH
Erase Suspend Latency Time to Read
26
35/40
µs
1,2,3,9
NOTES:
1. Typical values measured at TA = +25 °C and nominal voltages. Assumes corresponding lock-bits are
not set. Subject to change based on device characterization.
2. These performance numbers are valid for all speed versions.
3. Sampled but not 100% tested.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time (tWHQV1, tEHQV1) is 6.8 µs/byte (typical).
7. Effective per-word program time (tWHQV2, tEHQV2) is 13.6 µs/word (typical).
8. Max values are measured at worst case temperature and VCC corner after 100k cycles (except as
noted).
9. Max values are expressed at -25 °C/-40 °C.
10.Max values are expressed at 25 °C/-40 °C.


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