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BUX97B Datasheet(数据表) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

部件型号  BUX97B
说明  SPTECH Silicon NPN Power Transistor
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制造商  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
网页  http://www.superic-tech.com/
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BUX97B Datasheet(HTML) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

   
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
2
SPTECH Silicon NPN Power Transistor
BUX97B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 50mA; IB= 0
450
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 4A; IB= 1.25A
3.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.3
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 4A; IB= 1.25A
1.8
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
VCB= 800V; IE= 0;TC=150℃
1.0
3.0
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
1.0
mA
hFE
DC Current Gain
IC= 1A; VCE= 5V
10
70
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
20
MHz
Switching Times ;Resistive Load
ton
Turn-on Time
IC= 4A;IB1= -IB2= 1.25A;
VCC= 100V
0.6
μ
s
ts
Storage Time
3.5
μ
s
tf
Fall Time
0.5
μ
s




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