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TLE75620-EST 数据表(PDF) 11 Page - Infineon Technologies AG |
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TLE75620-EST 数据表(HTML) 11 Page - Infineon Technologies AG |
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11 / 81 page  Datasheet 11 Rev. 1.0 2017-11-23 TLE75620-EST SPIDER+ 12V General Product Characteristics Maximum energy dissipation repetitive pulses - IL(EAR) EAR –– 10 mJ 4) TJ(0) = 85 °C IL(0) = IL(EAR) 2*106 cycles P_4.1.15 IDLE pin Voltage at IDLE pin VIDLE -0.3 5.5 V – P_4.1.23 Current through IDLE pin IIDLE -0.75 0.75 mA – P_4.1.25 Current through IDLE pin IIDLE -10.0 2.0 mA t ≤ 2min. P_4.1.26 Input Pins Voltage at input pins VIN -0.3 5.5 V – P_4.1.28 Current through input pins IIN -0.75 0.75 mA – P_4.1.30 Current through input pins IIN -10.0 2.0 mA t ≤ 2min. P_4.1.31 SPI Pins Voltage at chip select pin VCSN -0.3 5.5 V – P_4.1.33 Current through chip select pin ICSN -0.75 0.75 mA – P_4.1.34 Current through chip select pin ICSN -10.0 2.0 mA t ≤ 2min. P_4.1.35 Voltage at serial clock pin VSCLK -0.3 5.5 V P_4.1.37 Current through serial clock pin ISCLK -0.75 0.75 mA – P_4.1.38 Current through serial clock pin ISCLK -10.0 2.0 mA t ≤ 2min. P_4.1.39 Voltage at serial input pin VSI -0.3 5.5 V P_4.1.41 Current through serial input pin ISI -0.75 0.75 mA – P_4.1.42 Current through serial input pin ISI -10.0 2.0 mA t ≤ 2min. P_4.1.43 Voltage at serial output pin SO VSO -0.3 VDD+0.3 V P_4.1.58 Current through serial output pin SO ISO -0.75 0.75 mA P_4.1.45 Current through serial output pin SO ISO -2.0 10.0 mA t ≤ 2min. P_4.1.46 Temperatures Junction Temperature TJ -40 – 150 °C – P_4.1.48 Storage Temperature Tstg -55 – 150 °C – P_4.1.49 ESD Susceptibility ESD Susceptibility HBM OUT pins vs. VS or GND VESD -4 – 4 kV 5) HBM P_4.1.50 ESD Susceptibility HBM other pins VESD -2 – 2 kV 5) HBM P_4.1.51 Table 2 Absolute Maximum Ratings (cont’d)1) TJ = -40 °C to +150 °C all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. |
类似零件编号 - TLE75620-EST |
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类似说明 - TLE75620-EST |
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