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BTT6200-4ESA 数据表(PDF) 10 Page - Infineon Technologies AG |
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BTT6200-4ESA 数据表(HTML) 10 Page - Infineon Technologies AG |
10 / 51 page Table 3 Absolute maximum ratings1) (continued) TJ = -40°C to 150°C; (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Voltage at DSEL pin VDSEL -0.3 – – 6 7 V – t < 2 min P_4.1.17 Current through DSEL pin IDSEL -2 – 2 mA – P_4.1.18 Sense pin Voltage at IS pin VIS -0.3 – VS V – P_4.1.19 Current through IS pin IIS -25 – 50 mA – P_4.1.20 Power stage Load current | IL | – – IL(LIM) A – P_4.1.21 Power dissipation (DC) PTOT – – 1.8 W TA = 85°C TJ < 150°C P_4.1.22 Maximum energy dissipation Single pulse (one channel) EAS – – 20 mJ IL(0) = 1 A TJ(0) = 150°C VS = 28 V P_4.1.23 Voltage at power transistor VDS – – 65 V – P_4.1.26 Currents Current through ground pin I GND -20 -150 – 20 20 mA – t < 2 min P_4.1.27 Temperatures Junction temperature TJ -40 – 150 °C – P_4.1.28 Storage temperature TSTG -55 – 150 °C – P_4.1.30 ESD susceptibility ESD susceptibility (all pins) VESD -2 – 2 kV 4) HBM P_4.1.31 ESD susceptibility OUT pin vs. GND and VS connected VESD -4 – 4 kV 4) HBM P_4.1.32 ESD susceptibility VESD -500 – 500 V 5) CDM P_4.1.33 ESD susceptibility pin (corner pins) VESD -750 – 750 V 5) CDM P_4.1.34 Notes: 1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 1 Not subject to production test. Specified by design. 4 ESD susceptibility Human Body Model "HBM" according to AEC Q100-002 5 ESD susceptibility Charged Device Model "CDM" according to AEC Q100-011 PROFET™+ 24V BTT6200-4ESA Electrical characteristics and parameters Datasheet 10 Rev. 1.00 2019-03-09 |
类似零件编号 - BTT6200-4ESA |
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类似说明 - BTT6200-4ESA |
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