BTT6200-1ENA datasheet(11/46 Pages) INFINEON

部件名	BTT6200-1ENA

功能描述	Smart High-Side Power Switch Single Channel, 200m廓

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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Data Sheet

11

Rev. 1.0

2018-05-14

PROFET™+ 24 V

BTT6200-1ENA

Power Stage

5

Power Stage

The power stage is built using an N-channel vertical power MOSFET (DMOS) with charge pump.

5.1

Output ON-State Resistance

The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. Figure 8

shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The

behavior in reverse polarity is described in Chapter 6.4.

Figure 8

Typical ON-State Resistance

A high signal at the input pin (see Chapter 8) causes the power DMOS to switch ON with a dedicated slope,

which is optimized in terms of EMC emission.

5.2

Turn ON/OFF Characteristics with Resistive Load

Figure 9 shows the typical timing when switching a resistive load.

Figure 9

Switching a Resistive Load Timing

-40

-20

0

20

40

60

80

100

120

140

160

100

150

200

250

300

350

400

Junction Temperature T

J

[°C]

0

5

10

15

20

25

30

35

120

140

160

180

200

220

240

260

280

300

320

Supply Voltage V

S

[V]

IN

t

VOUT

tON

tON_delay

tOFF

90% VS

10% VS

VIN_H

VIN_L

t

Switching times.vsd

tOFF_delay

30% VS

70% VS

dV/dt ON

dV/dt OFF

类似零件编号 - BTT6200-1ENA

制造商	部件名	数据表	功能描述
Infineon Technologies A...	BTT6200-1EJA	2Mb / 48P	Suitable for resistive, inductive and capacitive loads Rev. 1.0, 2014-08-20

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类似说明 - BTT6200-1ENA

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BTT6200-1ENA 数据表(PDF) 11 Page - Infineon Technologies AG

BTT6200-1ENA 数据表(HTML) 11 Page - Infineon Technologies AG

类似零件编号 - BTT6200-1ENA

类似说明 - BTT6200-1ENA

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BTT6200-1ENA 数据表(PDF) 11 Page - Infineon Technologies AG

BTT6200-1ENA 数据表(HTML) 11 Page - Infineon Technologies AG

类似零件编号 - BTT6200-1ENA

类似说明 - BTT6200-1ENA

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