PC28F256J3C-115 datasheet(20/72 Pages) INTEL

部件名	PC28F256J3C-115

功能描述	Intel StrataFlash Memory (J3)

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制造商	INTEL [Intel Corporation]

网页	http://www.intel.com

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20 / 72 page

256-Mbit J3 (x8/x16)

20

Datasheet

6.2

DC Voltage Characteristics

ICCE

VCC Block Erase or Clear

Block Lock-Bits Current

35

70

mA

CMOS Inputs, VPEN = VCC

1,4

40

80

mA

TTL Inputs, VPEN = VCC

ICCWS

ICCES

VCC Program Suspend or

Block Erase Suspend

Current

10

mA

Device is enabled (see Table 13)1,5

NOTES:

1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and

speeds). Contact Intel’s Application Support Hotline or your local sales office for information about typical

specifications.

2. Includes STS.

3. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL inputs are either VIL or VIH.

4. Sampled, not 100% tested.

5. ICCWS and ICCES are specified with the device selected. If the device is read or written while in erase suspend

mode, the device’s current draw is ICCR and ICCWS

Table 7.

DC Voltage Characteristics

Symbol

Parameter

Min

Max

Unit

Test Conditions

Notes

VIL

Input Low Voltage

–0.5

0.8

V

2, 6

VIH

Input High Voltage

2.0

VCCQ

+ 0.5

V2,6

VOL

Output Low Voltage

0.4

V

VCCQ = VCCQ Min

IOL = 2 mA

1,2

0.2

V

VCCQ = VCCQ Min

IOL = 100 µA

VOH

Output High Voltage

0.85

×

VCCQ

V

VCCQ = VCCQ Min

IOH = –2.5 mA

1,2

VCCQ

–

0.2

V

VCCQ = VCCQ Min

IOH = –100 µA

VPENLK

VPEN Lockout during Program,

Erase and Lock-Bit Operations

2.2

V

2,3,4,7

Table 6.

DC Current Characteristics (Sheet 2 of 2)

VCCQ

2.7 - 3.6V

Test Conditions

Notes

VCC

2.7 - 3.6V

Symbol

Parameter

Typ

Max

Unit

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