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FM5822 数据表(PDF) 1 Page - Formosa MS

部件名 FM5822
功能描述  Chip Schottky Barrier Diodes - Silicon epitaxial planer type
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制造商  FORMOSA [Formosa MS]
网页  http://www.formosams.com
标志 FORMOSA - Formosa MS

FM5822 数据表(HTML) 1 Page - Formosa MS

  FM5822 Datasheet HTML 1Page - Formosa MS FM5822 Datasheet HTML 2Page - Formosa MS  
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FM5820-B THRU FM5822-B
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.00878 ounce, 0.293 gram
(V)
(V)
(V)
(V)
(oC)
FM5820
SK32
20
14
20
0.475
FM5821
SK33
30
21
30
0.500
FM5822
SK34
40
28
40
0.525
SYMBOLS
MARKING
CODE
-55 to +125
Storage
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
MAXIMUM RATINGS (AT T A=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
IO
3.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
80
A
VR = VRRM TA =
25
o C
0.5
mA
VR = VRRM TA = 125
o C
20
mA
Thermal resistance
Junction to ambient
RqJA
55
o C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
250
pF
Operating temperature
TSTG
-55
+150
o C
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.213(5.4)
0.197(5.0)
0.016(0.4) Typ.
0.142(3.6)
0.126(3.2)
0.173(4.4)
0.157(4.0)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMB


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