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SI7439DP-T1-E3 数据表(PDF) 2 Page - Vishay Siliconix |
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SI7439DP-T1-E3 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si7439DP Vishay Siliconix New Product www.vishay.com 2 Document Number: 73106 S-41526—Rev. A, 16-Aug-04 a. Surface Mounted on 1” x 1” FR4 Board. SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −2.0 −4.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −150 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −150 V, VGS = 0 V, TJ = 70_C −10 mA On-State Drain Currenta ID(on) VDS = −10 V, VGS = −10 V −30 A Drain Source On State Resistancea rDS( ) VGS = −10 V, ID = −5.2 A 0.073 0.090 W Drain-Source On-State Resistancea rDS(on) VGS = −6 V, ID = −5.0 A 0.077 0.095 W Forward Transconductancea gfs VDS = −15 V, ID = −5.2 A 19 S Diode Forward Voltagea VSD IS = −4.2 A, VGS = 0 V −0.78 −1.2 V Dynamicb Total Gate Charge Qg 88 135 Gate-Source Charge Qgs VDS = −75 V, VGS = −10 V, ID = −5.2 A 17.5 nC Gate-Drain Charge Qgd 26.5 Gate Resistance Rg 1.5 3 4.5 W Turn-On Delay Time td(on) 25 40 Rise Time tr VDD = −75 V, RL = 15.5 W 46 70 Turn-Off Delay Time td(off) VDD = −75 V, RL = 15.5 W ID ^ −4.8 A, VGEN = −10 V, Rg = 6 W 115 180 ns Fall Time tf 64 100 Source-Drain Reverse Recovery Time trr IF = −2.9 A, di/dt = 100 A/ms 100 150 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 5 10 15 20 25 30 35 40 0 2468 10 VGS = 10 thru 5 V 25_C TC = 125_C −55_C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 4 V |
类似零件编号 - SI7439DP-T1-E3 |
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类似说明 - SI7439DP-T1-E3 |
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