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TA1287PG 数据表(PDF) 6 Page - Toshiba Semiconductor |
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TA1287PG 数据表(HTML) 6 Page - Toshiba Semiconductor |
6 / 24 page TA1287PG,TA1287FG 2004-08-03 6 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage VCCmax 12 V Input Pin Voltage Vin GND − 0.3 to VCC + 0.3 V TA1287PG PDD (Note 1) 1400 Power Consumption TA1287FG PDF (Note 1) 641 mW TA1287PG 1 / θjaD −11.2 mW / °C Power Consumption Reduction Ratio TA1287FG 1 / θjaF −5.13 mW / °C Operating Temperature Topr −20~65 °C Storage Temperature Tstg −55~150 °C Note 1: Refer to the figure below. Note 2: It is possible that TA1287FG function faultily caused by leak problems according to a field intensity from CRT. Put IC lay-out position to CRT be far more than 20 cm. If there is not a enough distance, intercept it by a shield. Fig. Power consumption reduction against ambient temperature |
类似零件编号 - TA1287PG |
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类似说明 - TA1287PG |
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