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TMCS1100 数据表(PDF) 24 Page - Texas Instruments

部件名 TMCS1100
功能描述  TMCS1100 1% High-Precision, Basic Isolation Hall-Effect Current Sensor With 짹600-V Working Voltage
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

TMCS1100 数据表(HTML) 24 Page - Texas Instruments

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Temperature (°C)
-50
-25
0
25
50
75
100
125
150
-80
-60
-40
-20
0
20
40
60
80
A1
A2
A3
A4
Temperature (°C)
-50
-25
0
25
50
75
100
125
150
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
A1
A2
A3
A4
24
TMCS1100
SBOS820A – SEPTEMBER 2019 – REVISED JUNE 2020
www.ti.com
Product Folder Links: TMCS1100
Submit Documentation Feedback
Copyright © 2019–2020, Texas Instruments Incorporated
Feature Description (continued)
Figure 35 shows the intrinsic capability of the isolation barrier to withstand high-voltage stress over the lifetime of
the device. Based on the TDDB data, the intrinsic capability of these devices is 424 VRMS with a lifetime of > 100
years. Other factors such as operating environment and pollution degree can further limit the working voltage of
the component in an end system.
Figure 35. Insulation Lifetime
9.3.3 High-Precision Signal Chain
The TMCS1100 uses a precision, low-drift signal chain with proprietary sensor linearization techniques to provide
a highly accurate and stable current measurement across the full temperature range of the device. The device is
fully tested and calibrated at the factory to account for any variations in either silicon or packaging process
variations. The full signal chain provides a fixed sensitivity voltage output that is proportional to the current
through the leadframe of the isolated input.
9.3.3.1 Temperature Stability
The TMCS1100 includes a proprietary temperature compensation technique which results in significantly
improved parametric drift across the full temperature range. This compensation technique accounts for changes
in ambient temperature, self-heating, and package stress. A zero-drift signal chain architecture and Hall sensor
temperature stabilization methods enable stable sensitivity and minimize offset errors across temperature, and
drastically improves system-level performance across the required operating conditions.
Figure 36 shows the offset error across the full device ambient temperature range. Figure 37 shows the typical
sensitivity. There are no other external components introducing errors sources; therefore, the high intrinsic
accuracy and stability over temperature directly translates to system-level performance. As a result of this high
precision, even a system with no calibration can reach < 1% of total error current-sensing capability.
Figure 36. Offset Error Drift Across Temperature
Figure 37. Sensitivity Drift Across Temperature


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