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TMCS1100 数据表(PDF) 24 Page - Texas Instruments |
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TMCS1100 数据表(HTML) 24 Page - Texas Instruments |
24 / 50 page Temperature (°C) -50 -25 0 25 50 75 100 125 150 -80 -60 -40 -20 0 20 40 60 80 A1 A2 A3 A4 Temperature (°C) -50 -25 0 25 50 75 100 125 150 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 A1 A2 A3 A4 24 TMCS1100 SBOS820A – SEPTEMBER 2019 – REVISED JUNE 2020 www.ti.com Product Folder Links: TMCS1100 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated Feature Description (continued) Figure 35 shows the intrinsic capability of the isolation barrier to withstand high-voltage stress over the lifetime of the device. Based on the TDDB data, the intrinsic capability of these devices is 424 VRMS with a lifetime of > 100 years. Other factors such as operating environment and pollution degree can further limit the working voltage of the component in an end system. Figure 35. Insulation Lifetime 9.3.3 High-Precision Signal Chain The TMCS1100 uses a precision, low-drift signal chain with proprietary sensor linearization techniques to provide a highly accurate and stable current measurement across the full temperature range of the device. The device is fully tested and calibrated at the factory to account for any variations in either silicon or packaging process variations. The full signal chain provides a fixed sensitivity voltage output that is proportional to the current through the leadframe of the isolated input. 9.3.3.1 Temperature Stability The TMCS1100 includes a proprietary temperature compensation technique which results in significantly improved parametric drift across the full temperature range. This compensation technique accounts for changes in ambient temperature, self-heating, and package stress. A zero-drift signal chain architecture and Hall sensor temperature stabilization methods enable stable sensitivity and minimize offset errors across temperature, and drastically improves system-level performance across the required operating conditions. Figure 36 shows the offset error across the full device ambient temperature range. Figure 37 shows the typical sensitivity. There are no other external components introducing errors sources; therefore, the high intrinsic accuracy and stability over temperature directly translates to system-level performance. As a result of this high precision, even a system with no calibration can reach < 1% of total error current-sensing capability. Figure 36. Offset Error Drift Across Temperature Figure 37. Sensitivity Drift Across Temperature |
类似零件编号 - TMCS1100_V01 |
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类似说明 - TMCS1100_V01 |
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