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RYU002N05T306 数据表(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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RYU002N05T306 数据表(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
2 / 8 page Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min. Typ.a Max. Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 10 µA 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 12.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 10 µA VDS = 0 V, VGS = ± 15 V 1 VDS = 0 V, VGS = ± 10 V ± 150 nA VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 1000 VDS = 0 V, VGS = ± 5 V ± 100 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µA VDS = 60 V, VGS = 0 V , TJ = 125 °C 500 On-State Drain Currenta ID(on) VGS = 10 V, VDS = 7.5 V 800 mA VGS = 4.5 V, VDS = 10 V 500 Drain-Source On-Resistancea RDS(on) VGS = 10 V, ID = 500 mA 2 Ω VGS = 4.5 V, ID = 200 mA 4 Forward Transconductancea gfs VDS = 10 V, ID = 200 mA 100 mS Diode Forward Voltage VSD IS = 200 mA, VGS = 0 V 1.3 V Dynamica Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V ID ≅ 250 mA 0.4 0.6 nC Input Capacitance Ciss VDS = 25 V, VGS = 0 V f = 1 MHz 30 pF Output Capacitance Coss 6 Reverse Transfer Capacitance Crss 2.5 Switchinga, b, c Turn-On Time td(on) VDD = 30 V, RL = 150 Ω ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω 25 ns Turn-Off Time td(off) 35 www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 RYU002N05T306 2 |
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