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AO3401 Datasheet(数据表) 2 Page - VBsemi Electronics Co.,Ltd

部件型号  AO3401
说明  P-Channel 30 V (D-S) MOSFET
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.cn
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AO3401 Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

   
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Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 30
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 19
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
4
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = - 250 µA
- 0.5
- 2.0
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
- 1
µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 5
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 10 V
- 2
.5
A
Drain-Source On-State Resistancea
RDS(on)
VGS =- 10 V, ID = - 4.4 A
0.0
46
0.0
VGS =- 6 V, ID = - 4 A
0.0
49
0.05
VGS =- 4.5 V, ID = - 3.6 A
0.0
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 3.4 A
18
S
Dynamicb
Input Capacitance
Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
1295
pF
Output Capacitance
Coss
150
Reverse Transfer Capacitance
Crss
130
Total Gate Charge
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 5.4 A
24
36
nC
VDS = - 15 V, VGS = - 4.5 V, ID = - 5.4 A
11.4
17
Gate-Source Charge
Qgs
3.4
Gate-Drain Charge
Qgd
3.8
Gate Resistance
Rg
f = 1 MHz
1.5
7.7
15.4
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 3.5 
ID  - 4.3 A, VGEN = - 10 V, Rg = 1 
13
20
ns
Rise Time
tr
48
Turn-Off Delay Time
td(off)
38
57
Fall Time
tf
612
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 3.5 
ID  - 4.3 A, VGEN = - 4.5 V, Rg = 1 
28
42
Rise Time
tr
16
24
Turn-Off Delay Time
td(off)
30
45
Fall Time
tf
10
20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 2.1
A
Pulse Diode Forward Current (t = 100 µs)
ISM
- 80
Body Diode Voltage
VSD
IS = - 4.3 A, VGS 0 V
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C
15
23
ns
Body Diode Reverse Recovery Charge
Qrr
714
nC
Reverse Recovery Fall Time
ta
8
ns
Reverse Recovery Rise Time
tb
7
0
.0
54
55
63
8
V
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AO3401
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