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AO3401 Datasheet(数据表) 1 Page - VBsemi Electronics Co.,Ltd

部件型号  AO3401
说明  P-Channel 30 V (D-S) MOSFET
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.cn
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AO3401 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

   
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P-Channel 30 V (D-S) MOSFET
FEATURES
•TrenchFET® Power MOSFET
100 % Rg Tested
APPLICATIONS
For Mobile Computing
- Load Switch
- Notebook Adaptor Switch
- DC/DC Converter
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
PRODUCT SUMMARY
VDS (V)
RDS(on) () Typ.
ID (A)
a
Qg (Typ.)
- 30
0.0
46 at V
GS = - 10 V
-
5.6
11.4 nC
0.04
9 at V
GS = - 6 V
-
5
0.05
4 at V
GS = - 4.5 V
-
4.5
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
- 30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
-
5.6
A
TC = 70 °C
-
5.1
TA = 25 °C
- 5.4b,c
TA = 70 °C
- 4.3b,c
Pulsed Drain Current (t = 100 µs)
IDM
- 18
Continous Source-Drain Diode Current
TC = 25 °C
IS
- 2.1
TA = 25 °C
- 1b,c
Maximum Power Dissipation
TC = 25 °C
PD
2.5
W
TC = 70 °C
1.6
TA = 25 °C
1.25b,c
TA = 70 °C
0.8b,c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb,d
t
 5 s
RthJA
75
100
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
40
50
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AO3401
1




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