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AO3401 数据表(PDF) 4 Page - VBsemi Electronics Co.,Ltd

部件名 AO3401
功能描述  P-Channel 30 V (D-S) MOSFET
Download  9 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.cn
标志 VBSEMI - VBsemi Electronics Co.,Ltd

AO3401 数据表(HTML) 4 Page - VBsemi Electronics Co.,Ltd

  AO3401 Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd AO3401 Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd AO3401 Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd AO3401 Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd AO3401 Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd AO3401 Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd AO3401 Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd AO3401 Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd AO3401 Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0
0.3
0.6
0.9
1.2
V
SD - Source-to-Drain Voltage (V)
T
J = 150 °C
T
J = 25 °C
1
1.25
1.5
1.75
2
- 50
- 25
0
25
50
75
100
125
150
T
J - Temperature (°C)
I
D = 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.000
0.020
0.040
0.060
0.080
2
4
6
8
10
V
GS - Gate-to-Source Voltage (V)
T
J = 125 °C
T
J = 25 °C
I
D = 5.4 A
0
2
4
6
8
10
0.01
0.1
1
10
100
1000
Time (s)
TA =25 °C
Safe Operating Area, Junction-to-Ambient
0.001
0.01
0.1
1
5
10
0.1
1
10
100
V
DS - Drain-to-Source Voltage (V)
* V
GS > minimum VGS at which RDS(on) is specified
100 ms
Limited by RDS(on)*
1 ms
T
A = 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
10s, 1 s
DC
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AO3401
4


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