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EP1S30F1508I5ES 数据表(PDF) 52 Page - Altera Corporation |
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EP1S30F1508I5ES 数据表(HTML) 52 Page - Altera Corporation |
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52 / 290 page  2–28 Altera Corporation Stratix Device Handbook, Volume 1 July 2005 TriMatrix Memory M512 RAM blocks can have different clocks on its inputs and outputs. The wren, datain, and write address registers are all clocked together from one of the two clocks feeding the block. The read address, rden, and output registers can be clocked by either of the two clocks driving the block. This allows the RAM block to operate in read/write or input/output clock modes. Only the output register can be bypassed. The eight labclk signals or local interconnect can drive the inclock, outclock , wren, rden, inclr, and outclr signals. Because of the advanced interconnect between the LAB and M512 RAM blocks, LEs can also control the wren and rden signals and the RAM clock, clock enable, and asynchronous clear signals. Figure 2–15 shows the M512 RAM block control signal generation logic. The RAM blocks within Stratix devices have local interconnects to allow LEs and interconnects to drive into RAM blocks. The M512 RAM block local interconnect is driven by the R4, R8, C4, C8, and direct link interconnects from adjacent LABs. The M512 RAM blocks can communicate with LABs on either the left or right side through these row interconnects or with LAB columns on the left or right side with the column interconnects. Up to 10 direct link input connections to the M512 RAM block are possible from the left adjacent LABs and another 10 possible from the right adjacent LAB. M512 RAM outputs can also connect to left and right LABs through 10 direct link interconnects. The M512 RAM block has equal opportunity for access and performance to and from LABs on either its left or right side. Figure 2–16 shows the M512 RAM block to logic array interface. |
类似零件编号 - EP1S30F1508I5ES |
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类似说明 - EP1S30F1508I5ES |
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