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ISL9N308AD3ST Datasheet(数据表) 3 Page - VBsemi Electronics Co.,Ltd

部件型号  ISL9N308AD3ST
说明  N-Channel 30-V (D-S) MOSFET
下载  8 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.cn
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ISL9N308AD3ST Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd

   
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
0
15
30
45
60
75
90
0.0
0.5
1.0
1.5
2.0
2.5
VGS = 10 V thru 4 V
VDS - Drain-to-Source Voltage (V)
VGS = 2 V
VGS = 3 V
0
100
200
300
400
500
600
0
1020
3040
5060
70
8090
ID - Drain Current (A)
TC = - 55 °C
TC = 25 °C
TC = 125 °C
0
500
1000
1500
2000
500
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Ciss
Coss
Crss
Transfer Characteristics
RDS(on) vs. Drain Current
Gate Charge
0.0
0.6
1.2
1.8
2.4
3.0
012
34
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
TC = - 55 °C
TC = 125 °C
0.00
0
0.00
20
0.00
0.00
0
0.00
0
0.01
00
0.01
20
0
153045
607590
ID - Drain Current (A)
0
2
4
6
8
10
0
306090
120
150
180
Qg - Total Gate Charge (nC)
ID = 38.8 A
VDS = 24 V
VDS = 15 V
2
4
0
6
8
VGS = 4.5V
VGS = 10 V
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
ISL9N308AD3ST
33




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