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ISL9N308AD3ST Datasheet(数据表) 1 Page - VBsemi Electronics Co.,Ltd

部件型号  ISL9N308AD3ST
说明  N-Channel 30-V (D-S) MOSFET
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.cn
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ISL9N308AD3ST Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

   
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N-Channel 30-V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
OR-ing
Server
•DC/DC
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)
a, e
Qg (Typ)
30
0.00
5 at VGS = 10 V
1 nC
0.0
06at VGS = 4.5 V
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
ID
A
TC = 70 °C
60
TA = 25 °C
25.8b, c
TA = 70 °C
2
2b, c
Pulsed Drain Current
IDM
250
Avalanche Current Pulse
L = 0.1 mH
IAS
3
9
Single Pulse Avalanche Energy
EAS
94.8
mJ
Continuous Source-Drain Diode Current
TC = 25 °C
IS
90a, e
A
TA = 25 °C
3.13b, c
Maximum Power Dissipation
TC = 25 °C
PD
205a
W
TC = 70 °C
135
TA = 25 °C
3.75b, c
TA = 70 °C
2.63b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Max.
Unit
Maximum Junction-to-Ambientb, d
t
 10 sec
RthJA
32
40
°C/W
Maximum Junction-to-Case
Steady State
RthJC
0.5
0.6
68
D
G
S
N-Channel MOSFET
TO-252
S
GD
Top View
3
8
0
8
0
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
ISL9N308AD3ST
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