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ISL9N308AD3ST Datasheet(数据表) 5 Page - VBsemi Electronics Co.,Ltd

部件型号  ISL9N308AD3ST
说明  N-Channel 30-V (D-S) MOSFET
下载  8 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.cn
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ISL9N308AD3ST Datasheet(HTML) 5 Page - VBsemi Electronics Co.,Ltd

   
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
50
100
150
200
250
300
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
Package Limited
Power Derating
0
50
100
150
200
250
300
0
25
50
75
100
125
150
175
C - Case Temperature (°C)
T
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10- 4
10- 3
10- 2
10- 1
1
10
0.2
0.1
Duty Cycle = 0.5
Single Pulse
0.05
0.02
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
ISL9N308AD3ST
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