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ISL9N308AD3 Datasheet(数据表) 4 Page - VBsemi Electronics Co.,Ltd

部件型号  ISL9N308AD3
说明  N-Channel 30-V (D-S) MOSFET
下载  8 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.cn
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ISL9N308AD3 Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd

   
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
RDS(on) vs. VGS vs. Temperature
0.
2
0.
4
0.6
0.8
1.
0
1.
2
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
VGS = 10 V, ID= 38.8 A
VGS = 4.5 V, ID = 27 A
0.000
0.001
0.002
0.003
0.004
0.005
0246
8
10
VGS - Gate-to-Source Voltage (V)
ID = 38.8 A
TA = 125 °C
TA = 25 °C
Forward Diode Voltage vs. Temperature
Threshold Voltage
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD - Source-to-Drain Voltage (V)
TJ = 25 °C
TJ = 150 °C
0.8
1.2
1.6
2.0
2.4
2.8
- 50 - 25
0
25
50
75
100
125 150
175
TJ - Temperature (°C)
ID = 250 µA
Safe Operating Area, Junction-to-Ambient
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
TA = 25 °C
Single Pulse
dc
10 s
1 s
100 ms
10 ms
*Limited by rDS (on)
VDS - Drain-to-Source Voltage (V)
*VGS
minimum VGS at which rDS(on) is specified
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
ISL9N308AD3
44




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