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FQPF5N50CF 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FQPF5N50CF 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page 3 www.fairchildsemi.com FQPF5N50CF Rev. B Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperatue Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 2468 10 10 -1 10 0 10 1 150 °C 25 °C -55 °C Notes : 1. V DS = 40V 2. 250 µs Pulse Test V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Notes : 1. 250 µs Pulse Test 2. T C = 25 °C V DS , Drain-Source Voltage [V] 05 10 15 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V GS = 20V V GS = 10V Note : T J = 25 °C I D , Drain Current [A] 0.20.4 0.60.8 1.0 1.2 1.4 10 -1 10 0 10 1 150? Notes : 1. V GS = 0V 2. 250 µs Pulse Test 25? V SD , Source-Drain voltage [V] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS , Drain-Source Voltage [V] 0 5 10 15 20 0 2 4 6 8 10 12 V DS = 250V V DS = 100V V DS = 400V Note : I D = 5A Q G , Total Gate Charge [nC] |
类似零件编号 - FQPF5N50CF |
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类似说明 - FQPF5N50CF |
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