IRL2505PbF

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Advanced Process Technology

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Ultra Low On-Resistance

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Dynamic dv/dt Rating

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175°C Operating Temperature

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Fast Switching

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Fully Avalanche Rated

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The TO-220 is universally preferred for all commercial-

Industrial applications at power dissipation levels to

approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Description

S

D

G

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Logic-Level Gate Drive

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

104

…

74

A

Pulsed Drain Current



360

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

Gate-to-Source Voltage

± 16

V

Single Pulse Avalanche Energy

‚

500

mJ

Avalanche Current



54

A

Repetitive Avalanche Energy



20

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

55 to + 175

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.75

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Thermal Resistance

–––

62

Juction-to-Ambient

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

www.irf.com

1

8/3/04

PD -95622

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Lead-Free