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FQA90N10V2 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FQA90N10V2 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA90N10V2 Rev. A QFET ® October 2005 FQA90N10V2 100V N-Channel MOSFET Features • 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V • Low gate charge ( typical 147 nC) • Low Crss ( typical 300 pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability • 175 °C maximum junction temperature rating Description These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications low- est Rds(on) is required. TO-3P FQA Series GS D D G S Absolute Maximum Ratings Symbol Parameter FQA90N10V2 Unit VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 105 78 A A IDM Drain Current - Pulsed (Note 1) 420 A VGSS Gate-Source voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 2430 mJ IAR Avalanche Current (Note 1) 105 A EAR Repetitive Avalanche Energy (Note 1) 33 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25 °C 330 2.2 W W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case -- 0.45 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W |
类似零件编号 - FQA90N10V2 |
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类似说明 - FQA90N10V2 |
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