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FMG2G300US60 数据表(PDF) 2 Page - Fairchild Semiconductor |
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FMG2G300US60 数据表(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  ©2003 Fairchild Semiconductor Corporation FMG2G300US60 Rev. A Electrical Characteristics of IGBT T C = 25°C unless otherwise noted Electrical Characteristics of DIODE T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V ∆BVCES/ ∆TJ Temperature Coeff. of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES Gate - Emitter Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) Gate - Emitter Threshold Voltage IC =300mA, VCE = VGE 5.0 6.5 8.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 300A, VGE = 15V -- 2.1 2.7 V Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 300A, RG = 2Ω, VGE = 15V, Inductive Load, TC = 25°C -- 140 -- ns tr Rise Time -- 150 -- ns td(off) Turn-Off Delay Time -- 180 -- ns tf Fall Time -- 140 250 ns Eon Turn-On Switching Loss -- 4.4 -- mJ Eoff Turn-Off Switching Loss -- 12 -- mJ td(on) Turn-On Delay Time VCC = 300 V, IC = 300A, RG = 2Ω, VGE = 15V, Inductive Load, TC = 125°C -- 280 -- ns tr Rise Time -- 190 -- ns td(off) Turn-Off Delay Time -- 250 -- ns tf Fall Time -- 230 -- ns Eon Turn-On Switching Loss -- 8.2 -- mJ Eoff Turn-Off Switching Loss -- 19 -- mJ Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V @ TC = 100°C 10 -- -- us Qg Total Gate Charge VCE = 300 V, IC =300A, VGE = 15V -- 990 -- nC Qge Gate-Emitter Charge -- 210 -- nC Qgc Gate-Collector Charge -- 350 -- nC Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage IF = 300A TC = 25°C -- 1.9 2.8 V TC = 100°C -- 1.8 -- trr Diode Reverse Recovery Time IF = 300A di / dt = 600 A/us TC = 25°C -- 90 130 ns TC = 100°C -- 130 -- Irr Diode Peak Reverse Recovery Current TC = 25°C -- 32 42 A TC = 100°C -- 63 -- Qrr Diode Reverse Recovery Charge TC = 25°C -- 1440 2700 nC TC = 100°C -- 4095 -- Symbol Parameter Typ. Max. Units RθJC Junction-to-Case (IGBT Part, per 1/2 Module) -- 0.14 °C/W RθJC Junction-to-Case (DIODE Part, per 1/2 Module) -- 0.22 °C/W RθJC Case-to-Sink (Conductive grease applied) 0.035 -- °C/W Weight Weight of Module 360 -- g |
类似零件编号 - FMG2G300US60 |
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类似说明 - FMG2G300US60 |
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