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2SD1061 Datasheet(数据表) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

部件型号  2SD1061
说明  SPTECH Silicon NPN Power Transistor
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制造商  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
网页  http://www.superic-tech.com/
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2SD1061 Datasheet(HTML) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

   
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
2
SPTECH Silicon NPN Power Transistor
2SD1061
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
60
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 1mA ; RBE= ∞
50
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
0.4
V
ICBO
Collector Cutoff Current
VCB= 40V ; IE= 0
100
μ
A
IEBO
Emitter Cutoff Current
VEB= 4V ; IE= 0
100
μ
A
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
70
280
hFE-2
DC Current Gain
IC= 5A ; VCE= 2V
30
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
10
MHz
Switching times
ton
Turn-on Time
IC= 2A , IB1= IB2= 0.2A
RL = 10Ω; VCC= 20V
0.2
μ
s
tstg
Storage Time
0.9
μ
s
tf
Fall Time
0.3
μ
s
hFE-1 Classifications
Q
R
S
70-140
100-200 140-280




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