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2SD1049 Datasheet(数据表) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

部件型号  2SD1049
说明  SPTECH Silicon NPN Power Transistor
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制造商  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
网页  http://www.superic-tech.com/
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2SD1049 Datasheet(HTML) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

   
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
2
SPTECH Silicon NPN Power Transistor
2SD1049
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
80
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
120
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 25A; IB= 2.5A
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 25A; IB= 2.5A
2.0
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
0.1
mA
hFE
DC Current Gain
IC= 25A; VCE= 5V
20
Switching times Resistive Load
ton
Turn-on Time
IC= 25A; IB1= IB2= 2.5A;
RL= 3Ω, PW= 20μs;
Duty≤ 2%
1.0
μ
s
ts
Storage Time
2.5
μ
s
tf
Fall Time
0.4
μ
s




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