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2SD1025 Datasheet(数据表) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

部件型号  2SD1025
说明  SPTECH Silicon NPN Darlington Power Transistor
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制造商  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
网页  http://www.superic-tech.com/
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2SD1025 Datasheet(HTML) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

   
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
2
SPTECH Silicon NPN Darlington Power Transistor
2SD1025
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 10mA
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 10mA
2.0
V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
0.1
mA
ICEO
Collector Cutoff Current
VCE= 200V; IB= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
5
mA
hFE
DC Current Gain
IC= 5A; VCE= 3V
1500
30000
fT
Current-Gain—Bandwidth Product
IC= 0.8A; VCE= 10V
20
MHz
Switching times
ton
Turn-on Time
IC= 5A, IB1= IB2= 10mA
RL= 5Ω; VBB2= 4V
2.0
μ
s
tstg
Storage Time
8.0
μ
s
tf
Fall Time
5.0
μ
s




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