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2SD985 Datasheet(数据表) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

部件型号  2SD985
说明  SPTECH Silicon NPN Darlington Power Transistor
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制造商  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
网页  http://www.superic-tech.com/
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2SD985 Datasheet(HTML) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

   
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
2
SPTECH Silicon NPN Darlington Power Transistor
2SD985
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 1mA
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A; IB= 1mA
2.0
V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
10
μ
A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 0.5A; VCE= 2V
1000
hFE-2
DC Current Gain
IC= 1A; VCE= 2V
2000
30000
Switching Times
ton
Turn-on Time
IC=1.0A;IB1=IB2=1.0mA
VCC=50V; RL=50Ω
0.5
μ
s
tstg
Storage Time
1.0
μ
s
tf
Fall Time
1.0
μ
s
hFE-2 Classifications
M
L
K
2000-5000
4000-10000 8000-30000




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