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2SD985 Datasheet(数据表) 1 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

部件型号  2SD985
说明  SPTECH Silicon NPN Darlington Power Transistor
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制造商  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
网页  http://www.superic-tech.com/
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2SD985 Datasheet(HTML) 1 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

   
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
1
SPTECH Silicon NPN Darlington Power Transistor
2SD985
DESCRIPTION
·
Collector–Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min.)
·
DC Current Gain-
: hFE = 2000(Min) @ IC= 1A
·
Low Collector Saturation Voltage
·
Complement to Type 2SB794
APPLICATIONS
·
They are suitable for use to operate from IC without
predriver, such as hammer driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Pulse
3.0
A
IB
Base Current
0.15
A
PC
Collector Power Dissipation
Ta=25℃
1.0
W
Collector Power Dissipation
TC=25℃
10
Ti
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150




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