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MMG3013NT1 Datasheet(数据表) 1 Page - NXP Semiconductors

部件型号  MMG3013NT1
说明  Heterojunction Bipolar Transistor Technology (InGaP HBT)
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
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MMG3013NT1 Datasheet(HTML) 1 Page - NXP Semiconductors

 
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MMG3013NT1
1
RF Device Data
Freescale Semiconductor, Inc.
MMG3013NT1
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3013NT1 is a general purpose amplifier that is internally input
matched and internally output matched. It is designed for a broad range of
Class A, small--signal, high linearity, general purpose applications. It is
suitable for applications with frequencies from 0 to 6000 MHz such as
cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general
small--signal RF.
Features
• Frequency: 0--6000 MHz
• P1dB: 20.5 dBm @ 900 MHz
• Small--Signal Gain: 20 dB @ 900 MHz
• Third Order Output Intercept Point: 36 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Cost--effective SOT--89 Surface Mount Package
• In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
0--6000 MHz, 20 dB
20.5 dBm
InGaP HBT
1 2
3
CASE 1514--02, STYLE 1
SOT--89
PLASTIC
Table 1. Typical Performance (1)
Characteristic
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small--Signal Gain
(S21)
Gp
20
17
14.5
dB
Input Return Loss
(S11)
IRL
--17
--19
--15
dB
Output Return Loss
(S22)
ORL
--11
--9
--12
dB
Power Output @1dB
Compression
P1dB
20.5
20.5
19
dBm
Third Order Output
Intercept Point
OIP3
36
34
32
dBm
1. VCC =5 Vdc, TA =25°C, 50 ohm system.
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
VCC
7
V
Supply Current
ICC
300
mA
RF Input Power
Pin
12
dBm
Storage Temperature Range
Tstg
--65 to +150
°C
Junction Temperature (2)
TJ
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics
Characteristic
Symbol
Value (3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 89°C, 5 Vdc, 90 mA, no RF applied
RθJC
42
°C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MMG3013NT1
Rev. 7, 2/2012
Freescale Semiconductor
Technical Data
© Freescale Semiconductor, Inc., 2005--2008, 2012. All rights reserved.




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