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MMG3013NT1 Datasheet(数据表) 4 Page - NXP Semiconductors

部件型号  MMG3013NT1
说明  Heterojunction Bipolar Transistor Technology (InGaP HBT)
下载  15 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
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MMG3013NT1 Datasheet(HTML) 4 Page - NXP Semiconductors

 
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4
RF Device Data
Freescale Semiconductor, Inc.
MMG3013NT1
50 OHM TYPICAL CHARACTERISTICS
10
25
0
TC =85°C
f, FREQUENCY (GHz)
Figure 2. Small--Signal Gain (S21) versus
Frequency
20
15
12
3
4
25°C
--40°C
4
--40
0
0
S22
f, FREQUENCY (GHz)
Figure 3. Input/Output Return Loss versus
Frequency
S11
--10
--20
--30
12
3
20
9
23
10
Pout, OUTPUT POWER (dBm)
Figure 4. Small--Signal Gain versus Output
Power
21
19
17
15
13
12
14
11
3.5
3
2.5
2
1.5
1
0.5
16
23
22
21
19
17
f, FREQUENCY (GHz)
Figure 5. P1dB versus Frequency
20
18
5.4
0
180
4
VCC, COLLECTOR VOLTAGE (V)
Figure 6. Collector Current versus Collector
Voltage
140
100
20
4.2
5
5.2
60
4.4
4.6
4.8
4
24
39
0
f, FREQUENCY (GHz)
Figure 7. Third Order Output Intercept Point
versus Frequency
36
33
30
27
12
3
18
16
VCC =5 Vdc
900 MHz
2140 MHz
1960 MHz
2600 MHz
3500 MHz
160
120
80
40
VCC =5 Vdc
100 kHz Tone Spacing
VCC =5 Vdc
VCC =5 Vdc
VCC =5 Vdc




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