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MMG3011NT1 Datasheet(数据表) 9 Page - NXP Semiconductors

部件型号  MMG3011NT1
说明  Heterojunction Bipolar Transistor (InGaP HBT)
下载  14 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
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MMG3011NT1 Datasheet(HTML) 9 Page - NXP Semiconductors

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MMG3011NT1
9
RF Device Data
Freescale Semiconductor, Inc.
1.7
5.33
3.48
0.58
1.27
0.86
3.86
0.64
7.62
2.49
2.54
1.27
0.305 diameter
Figure 20. Recommended Mounting Configuration
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Recommended Solder Stencil
Figure 21. Product Marking
M3011N
()
YYWW




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