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MMG3010NT1 Datasheet(数据表) 1 Page - NXP Semiconductors

部件型号  MMG3010NT1
说明  Heterojunction Bipolar Transistor (InGaP HBT)
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
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MMG3010NT1 Datasheet(HTML) 1 Page - NXP Semiconductors

 
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MMG3010NT1
1
RF Device Data
Freescale Semiconductor
MMG3010NT1
0-6000 MHz, 15 dB
17 dBm
InGaP HBT
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
The MMG3010NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small -signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as Cellular,
PC S, BWA, WLL, PH S, CATV, VH F, UH F, UM TS and general
small -signal RF.
Features
• Frequency: 0 to 6000 MHz
• P1dB: 17 dBm @ 900 MHz
• Small-Signal Gain: 15 dB @ 900 MHz
• Third Order Output Intercept Point: 31 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT-89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
CASE 1514-02, STYLE 1
SOT-89
PLASTIC
1 2
3
Table 1. Typical Performance (1)
Characteristic
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small -Signal Gain
(S21)
Gp
15
14
12
dB
Input Return Loss
(S11)
IRL
-15
-17
-22
dB
Output Return Loss
(S22)
ORL
-25
-25
-15
dB
Power Output @1dB
Compression
P1db
17
16.5
15.5
dBm
Third Order Output
Intercept Point
IP3
31
30
28
dBm
1. VCC = 5 Vdc, TC = 25°C, 50 ohm system
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
VCC
7
V
Supply Current
ICC
300
mA
RF Input Power
Pin
10
dBm
Storage Temperature Range
Tstg
-65 to +150
°C
Junction Temperature (2)
TJ
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 54 mA, TC = 25°C)
Characteristic
Symbol
Value (3)
Unit
Thermal Resistance, Junction to Case
RθJC
83
°C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MMG3010NT1
Rev. 5, 3/2008
Freescale Semiconductor
Technical Data
© Freescale Semiconductor, Inc., 2005-2009. All rights reserved.




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