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MMG3010NT1 Datasheet(数据表) 5 Page - NXP Semiconductors

部件型号  MMG3010NT1
说明  Heterojunction Bipolar Transistor (InGaP HBT)
下载  15 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
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MMG3010NT1 Datasheet(HTML) 5 Page - NXP Semiconductors

 
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MMG3010NT1
5
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
21
36
4.9
VCC, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
33
30
27
24
4.95
5
5.1
5.05
f = 900 MHz
1 MHz Tone Spacing
100
−40
−20
0
20
40
60
80
26
33
T, TEMPERATURE (
_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
31
30
29
28
27
Figure 10. Third Order Intermodulation versus
Output Power
Pout, OUTPUT POWER (dBm)
−3
0
3
6
9
−80
−30
−50
−60
−70
VCC = 5 Vdc
ICC = 54 mA
f = 900 MHz
1 MHz Tone Spacing
−40
150
103
105
120
Figure 11. MTTF versus Junction Temperature
104
125
130
135
140
145
TJ, JUNCTION TEMPERATURE (°C)
NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 54 mA
4
0
8
0
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
VCC = 5 Vdc
ICC = 54 mA
6
4
2
12
3
−70
−20
−3
Pout, OUTPUT POWER (dBm)
Figure 13. Single-Carrier W-CDMA Adjacent
Channel Power Ratio versus Output Power
−30
−40
−50
−60
9
6
0
15
32
3
VCC = 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
VCC = 5 Vdc, ICC = 54 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
15
12
12




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