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MMG3010NT1 Datasheet(数据表) 4 Page - NXP Semiconductors

部件型号  MMG3010NT1
说明  Heterojunction Bipolar Transistor (InGaP HBT)
下载  15 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
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MMG3010NT1 Datasheet(HTML) 4 Page - NXP Semiconductors

 
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4
RF Device Data
Freescale Semiconductor
MMG3010NT1
50 OHM TYPICAL CHARACTERISTICS
5
20
0
TC = 85°C
f, FREQUENCY (GHz)
Figure 2. Small-Signal Gain (S21) versus
Frequency
15
10
12
3
4
25
°C
-40°C
4
−40
0
0
S22
f, FREQUENCY (GHz)
Figure 3. Input/Output Return Loss versus
Frequency
VCC = 5 Vdc
ICC = 54 mA
S11
−10
−20
−30
12
3
16
10
17
8
Pout, OUTPUT POWER (dBm)
Figure 4. Small-Signal Gain versus Output
Power
VCC = 5 Vdc
ICC = 54 mA
16
15
14
13
12
9
11
3.5
3
2.5
2
1.5
1
0.5
12
19
18
17
15
13
VCC = 5 Vdc
ICC = 54 mA
f, FREQUENCY (GHz)
Figure 5. P1dB versus Frequency
16
14
5.4
0
100
4
VCC, COLLECTOR VOLTAGE (V)
Figure 6. Collector Current versus Collector
Voltage
60
40
10
4.2
5
5.2
20
4.4
4.6
4.8
4
21
36
0
f, FREQUENCY (GHz)
Figure 7. Third Order Output Intercept Point
versus Frequency
33
30
27
24
12
3
VCC = 5 Vdc
ICC = 54 mA
1 MHz Tone Spacing
13
11
VCC = 5 Vdc
900 MHz
2140 MHz
1960 MHz
2600 MHz
3500 MHz
70
50
30
10
12
14
15
90
80




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